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| www..com DF2S5.6FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S5.6FS Diodes for Protecting against ESD The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Lead (Pb) - free CATHODE MARK Unit in mm 0.60.05 0.1 Zener voltage corresponds to E24 series. A Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 150* 150 -55~150 Unit mW C C 0.1 0.07M A 0.2 0.05 0.80.05 0.10.05 *: Mounted on a glass epoxy circuit board of 20 x 20 mm, pad dimension of 4 x 4 mm. 0.48+0.02 -0.03 Pad DimensionReference 0.85 0.26 0.21 Unit : mm fSC JEDEC JEITA TOSHIBA 1-1L1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25C) Characteristic Zener voltage Dynamic impedance Reverse current Total capacitance (between Cathode and Anode) Symbol VZ ZZ IR CT Test Condition IZ = 5mA IZ = 5mA VR = 3.5V VR = 0 V, f = 1 MHz Min 5.3 Typ. 5.6 40 Max 6.0 30 1 Unit V A pF Guaranteed Level of ESD Immunity Test Condition IEC61000-4-2 (Contact discharge) ESD Immunity Level Marking Equivalent Circuit (Top View) .6 30kV Criterion: No damage to device elements 1 2005-08-29 1.00.05 Maximum Ratings (Ta = 25C) www..com DF2S5.6FS IZ - VZ CT - VR 100 100 ZENER CURRENT IZ (mA) Ta=25C 10 TOTAL CAPACITANCE CT(pF) f=1MHz Ta=25C 1 10 0 0.1 0.01 0 0 1 2 3 4 5 6 7 8 ZENER VOLTAGE VZ (V) 9 10 1 0 1 2 3 4 5 REVERSE VOLTAGE VR(V) 6 2 2005-08-29 www..com DF2S5.6FS 3 2005-08-29 |
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